Inference of the genetic network regulating lateral root initiation in Arabidopsis thaliana

Regulation of gene expression is crucial for organism growth, and it is one of the challenges in Systems Biology to reconstruct the underlying regulatory biological networks from transcriptomic data. The formation of lateral roots in Arabidopsis thaliana is stimulated by a cascade of regulators of which only the interactions of its initial elements have been identified. Using simulated gene expression data with known network topology, we compare the performance of inference algorithms, based on different approaches, for which ready-to-use software is available. We show that their performance improves with the network size and the inclusion of mutants. We then analyse two sets of genes, whose activity is likely to be relevant to lateral root initiation in Arabidopsis, by integrating sequence analysis with the intersection of the results of the best performing methods on time series and mutants to infer their regulatory network. The methods applied capture known interactions between genes that are candidate regulators at early stages of development. The network inferred from genes significantly expressed during lateral root formation exhibits distinct scale-free, small world and hierarchical properties and the nodes with a high out-degree may warrant further investigation

ENCENTRUM ESSEXIS SP. N. (MONOGONONTA: DICRANOPHORIDAE), A NEW ROTIFER INHABITING STREAM BENTHOS FROM EAST ENGLAND

A new species of Rotifera belonging to the genus Encentrum (Monogononta, Dicranophoridae) is described from benthos of the Blackwater River, East Anglia, Essex, England, UK. Encentrum essexis sp. n. is characterised by the in dorsal view more or less conical toes having three elongate drop-shaped, light-refracting bodies leading to the tip of the toe. Trophi of Isoencentrum-type; outline of rami hexagonal; intramallei extended towards trophi axis into long spiniform process; inner margin of basal rami chambers with short tooth

Organic layers on silicon result in a unique hybrid fet

A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials.\ud Keywords: organic monolayer, FET, conducting polyme

γ-H2AX foci as in vivo effect biomarker in children emphasize the importance to minimize x-ray doses in paediatric CT imaging

Objectives: Investigation of DNA damage induced by CT x-rays in paediatric patients versus patient dose in a multicentre setting. Methods: From 51 paediatric patients (median age, 3.8 years) who underwent an abdomen or chest CT examination in one of the five participating radiology departments, blood samples were taken before and shortly after the examination. DNA damage was estimated by scoring gamma-H2AX foci in peripheral blood T lymphocytes. Patient-specific organ and tissue doses were calculated with a validated Monte Carlo program. Individual lifetime attributable risks (LAR) for cancer incidence and mortality were estimated according to the BEIR VII risk models. Results: Despite the low CT doses, a median increase of 0.13 gamma-H2AX foci/cell was observed. Plotting the induced gamma-H2AX foci versus blood dose indicated a low-dose hypersensitivity, supported also by an in vitro dose-response study. Differences in dose levels between radiology centres were reflected in differences in DNA damage. LAR of cancer mortality for the paediatric chest CT and abdomen CT cohort was 0.08 and 0.13% respectively. Conclusion: CT x-rays induce DNA damage in paediatric patients even at low doses and the level of DNA damage is reduced by application of more effective CT dose reduction techniques and paediatric protocols

How branching can change the conductance of ballistic semiconductor devices

We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential.Comment: accepted for publication in Phys. Rev.

Current Path Properties of the Transport Anisotropy at Filling Factor 9/2

To establish the presence and orientation of the proposed striped phase in ultra-high mobility 2D electron systems at filling factor 9/2, current path transport properties are determined by varying the separation and allignment of current and voltage contacts. Contacts alligned orthogonal to the proposed intrinsic striped phase produce voltages consistent with current spreading along the stripes; current driven along the proposed stripe direction results in voltages consistent with channeling along the stripes. Direct comparison is made to current spreading/channeling properties of artificially induced 1D charge modulated systems, which indicates the 9/2 direction.Comment: 10 pages, 4 figure

Ultrafast lithium diffusion in bilayer graphene

Solids that simultaneously conduct electrons and ions are key elements for the mass transfer and storage required in battery electrodes. Single-phase materials with a high electronic and high ionic conductivity at room temperature are hard to come by, and therefore multiphase systems with separate ion and electron channels have been put forward instead. Here we report on bilayer graphene as a single-phase mixed conductor that demonstrates Li diffusion faster than in graphite and even surpassing the diffusion of sodium chloride in liquid water. To measure Li diffusion, we have developed an on-chip electrochemical cell architecture in which the redox reaction that forces Li intercalation is localized only at a protrusion of the device so that the graphene bilayer remains unperturbed from the electrolyte during operation. We performed time-dependent Hall measurements across spatially displaced Hall probes to monitor the in-plane Li diffusion kinetics within the graphene bilayer and measured a diffusion coefficient as high as 7 × 10 -5 â €...cm 2 s -1

Spinor classification of the Weyl tensor in five dimensions

We investigate the spinor classification of the Weyl tensor in five dimensions due to De Smet. We show that a previously overlooked reality condition reduces the number of possible types in the classification. We classify all vacuum solutions belonging to the most special algebraic type. The connection between this spinor and the tensor classification due to Coley, Milson, Pravda and Pravdov\'a is investigated and the relation between most of the types in each of the classifications is given. We show that the black ring is algebraically general in the spinor classification.Comment: 40 page

Electron scattering times in ZnO based polar heterostructures

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10⁶ cm²/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors

A master-slave robot for vitreo-retinal eye surgery

Abstract only